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STB80NF55L-06
N - CHANNEL 55V - 0.005 Ω - 80A D2PAK STripFET™ POWER MOSFET
TYPE STB80NF55L-06
s...
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STB80NF55L-06
N - CHANNEL 55V - 0.005 Ω - 80A D2PAK STripFET™ POWER MOSFET
TYPE STB80NF55L-06
s s s s
V DSS 55 V
R DS( on ) < 0.0065 Ω
ID 80 A
TYPICAL RDS(on) = 0.005 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DataSheet4U.com s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS
DataShe
e
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR VGS ID ID I DM ( ) P tot E AS ( 1 ) T st g Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
o
Value 55 55 ± 20 80 57 320 210 1.4 1 -65 to 175 175
( 1) starting Tj = 25 oC, ID =40A , VDD = 30V
Unit V V V A A A W W /o C J
o o
C C
() Pulse width limited by safe operating area
October 1999
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