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STB80NF55-06
N - CHANNEL 55V - 0.005Ω - 80A TO-262/TO-263 STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STB80NF55-06
s s s s
V DSS 55 V
R DS( on) < 0.0065 Ω
ID 80 A
s
s
TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX ”-1”)\ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX ”T4”)
3 12
3 1
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transiINTERNAL SCHEMATIC DIAGRAM stor shows extremely high packing density for low DataSheet4U.com on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o o
I2PAK TO-262 (suffix ”-1”)
D2PAK TO-263 (suffix ”T4”)
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Value 55 55 ± 20 80 57 320 210 1.43 7 -65 to 175 175
( 1) ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/7
(•) Pulse width limited by safe operating area
October 1999
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STB80NF55-06
THERMAL DATA
R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose 0.7 62.5 0.5 300 C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 30 V) Max Value 80 650 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 55 1 10 ± 100 Typ. Max. Unit V µA µA nA
V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V
T c = 125 oC
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ON (∗)
Symbo l V GS(th) R DS(on) I D(o n) Parameter
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Test Con ditions ID = 250 µ A ID = 40 A 80 Min. 2 Typ. 3 0.005 Max. 4 0.0065 Unit V Ω A Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V
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V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s (∗ ) C iss C os s C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Con ditions V DS > ID(o n) x R DS(on )ma x V DS = 25 V f = 1 MHz I D =40 A V GS = 0 Min. Typ. 50 8000 1100 220 Max. Unit S pF pF pF
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STB80NF55-06
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 27 V I D = 40 A R G = 4.7 Ω V GS = 10 V (Resistive Load, see fig. 3) V DD = 44 V I D = 80 A VGS = 10 V Min. Typ. 35 240 178 29 61 230 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbo l t d(of f) tf t d(of f) tr (Voff) tf tc Parameter Turn-off Delay T ime Fall T ime Turn-off Delay T ime Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions VDD = 27 V I D = 40 A V GS = 10 V R G =4.7 Ω (Resistive Load, see fig. 3) V DD = 44 V I D = 80 A V GS = 10 V R G = 4.7 Ω (Induct ive Load, see fig. 5) Min. Typ. 260 80 225 55 145 205 Max. Unit ns ns ns ns ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Con ditions Min. Typ. Max. 80 320 1.5 80 0.24 6 Unit A A V ns µC A
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I SD = 80 A V GS = 0 I SD = 80 A di/dt = 100 A/ µ s T J = 150 o C V DD = 20 V (see test circuit, fig. 5)
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(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
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STB80NF55-06
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
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Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB80NF55-06
TO-262 (.