STD6NF10

www.DataSheet4U.com N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STD6NF10 s s s s s STD6NF10 VDSS 100 V RDS(on) <0.250 Ω ID 6A s TYPICAL RDS(on) = 0.22 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed INTERNAL SCHEMATIC DIAGRAM to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for DataSheet4U.com Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. DataShee APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Value 100 100 ± 20 6 4 Unit V V V A A Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature 24 30 0.2 40 200 -65 to 175 (1) ISD ≤6A, di/dt ...