STD60N55-1

www.DataSheet4U.com STD60N55-1 STD60N55 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET PRELIMINARY DATA General features Type STD60N55 STD60N55-1 ■ ■ VDSS 55V 55V RDS(on) <10.5mΩ <10.5mΩ ID 65A 65A Pw 110W 110W 3 1 Standard threshold drive 100% avalanche tested DPAK 3 2 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility. The resulting transistor shows extremely high packing density for low on- DataSheet4U.com resistance, rugged avalanche characteristics and low gate charge. schematic diagram DataShee Applications ■ Switching application Order codes Part number STD60N55 STD60N55-1 Marking D60N55 D60N55-1 Package DPAK IPAK Packaging Tape & reel Tube July 2006 Rev 1 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com Contents STD60N55 - STD60N55-1 Contents 1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data...