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UTO102 Dataheets PDF



Part Number UTO102
Manufacturers Agilent Technologies
Logo Agilent Technologies
Description Thin Film Cascadable Amplifier
Datasheet UTO102 DatasheetUTO102 Datasheet (PDF)

www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 20 to 150 MHz Technical Data UTO/UTC 102 Series Features • Frequency Range: 20 to 150␣MHz • High Gain: 24.5 dB (Typ) • Low Noise: 2.7 dB (Typ) • High Power: 19.5 dBm (Typ) • Temperature Compensated Description The 102 Series is a single-stage, high-gain silicon bipolar amplifier that incorporates thin-film technology. A low noise figure and high efficiency are the result of an output transformer coupling design. Resistive .

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www.DataSheet4U.com H Avantek Products Thin-Film Cascadable Amplifier 20 to 150 MHz Technical Data UTO/UTC 102 Series Features • Frequency Range: 20 to 150␣MHz • High Gain: 24.5 dB (Typ) • Low Noise: 2.7 dB (Typ) • High Power: 19.5 dBm (Typ) • Temperature Compensated Description The 102 Series is a single-stage, high-gain silicon bipolar amplifier that incorporates thin-film technology. A low noise figure and high efficiency are the result of an output transformer coupling design. Resistive feedback and DataSheet4U.com active bias provide temperature compensation and increased immunity to bias voltage variations. Blocking capacitors couple the RF through the amplifier while a low VSWR is maintained through inductive tuning. The 102 Series is available in either the T0-8 hermetic package or the connectored TC-1 package. Pin Configuration UTO—TO-8T GROUND RF IN RFOUT DataShee V+ CASE GROUND Applications • Low Frequency IF Stages • Medical Instruments: Ultra-Sound, Magnetic Resonance UTC—TC-1 RF IN RF OUT V+ Schematic V+ Maximum Ratings Parameter DC Voltage Continuous RF Input Power 29 Operating Case Temperature 27 Storage Temperature 25 “R” Series Burn-In Temperature 23 3.0 Maximum Noise Figure Noise Figure, dB 2.5 2.0 1.5 1.0 RFIN RFOUT 17 Volts +13 dBm -55 to +125°C -62 to +150°C +125°C 80 120 Thermal Characteristics 120 1 0 10 40 Frequency, MHz θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) 87°C/W 266 mW 23°C 564,100 Hrs. Note 1: For further information, see Reliability Screening, Pub. 5963-3240E. DataSheet4U.com Weight: (typical) UTO — 2.1 grams; UTC — 21.5 grams DataSheet 4 U .com www.DataSheet4U.com 2 Electrical Specifications (Measured in 50 Ω system @ +15 VDC nominal) Symbol BW GP — NF P1dB VSWR VSWR IP3 IP2 HP2 ID Characteristic Frequency Range Small Signal Gain (Min.) Gain Flatness (Max.) Noise Figure (Max.) Power Output @ +1 dB Comp. (Min.) Input VSWR (Max.) Output VSWR (Max.) Two Tone 3rd Order Intercept Point Two Tone 2nd Order Intercept Point One Tone 2nd Harmonic Intercept Pt. DC Current Typical Guaranteed Specifications TC = 25°C TC = 0 to 50°C TC = -55 to +85°C 20-150 24.5 ± 0.3 2.7 +19.5 1.5:1 1.5:1 +32.0 +43.0 +50.0 31 20-150 23.5 ± 1.0 3.2 +18.0 2.0:1 2.0:1 — — — — 20-150 22.5 ± 1.0 3.5 +17.5 2.0:1 2.0:1 — — — — Unit MHz dB dB dB dBm — — dBm dBm dBm mA Typical Performance Over Temperature (@ +15 VDC unless otherwise noted) V+ Noise Figure, dB et4U.com Key: +25°C +85°C -55°C Gain, dB Gain 27 4.0 3.5 3.0 2.5 2.0 10 40 Noise Figure DataShee 25 23 DataSheet4U.com RFIN RFOUT 21 10 40 80 120 160 200 80 120 160 200 Frequency, MHz Frequency, MHz Power Output Power Output @ 1 dB Gain Compression, dBm 21.0 20.5 2.5 Input VSWR 2.5 Output VSWR VSWR 20.0 19.5 19.0 10 40 80 120 160 200 VSWR 40 80 120 160 200 2.0 1.5 2.0 1.5 1.0 10 1.0 10 40 80 120 160 200 Frequency, MHz Frequency, MHz Frequency, MHz Third-.


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