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4Mb SMART 3 BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F004B3 MT28F400B3
3V Only, Dual Supply (Smart 3)
FEATURES
• Seven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 • Compatible with 0.3µm Smart 3 device • Advanced 0.18µm CMOS floating-gate process • Address access time: 80ns • 100,000 ERASE cycles • Industry-standard pinouts • Inputs and outputs are fully TTL-compatible • Automated write and erase algorithm • Two-cycle WRITE/ERASE sequence • Byte- or word-wide READ and WRITE DataSheet4U.com (MT28F400B3, 256K x 16/512K x 8) • Byte-wide READ and WRITE only (MT28F004B3, 512K x 8) • TSOP and SOP packaging options
TSOP Type I 48-Pin TSOP Type I
44-Pin SOP
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OPTIONS
• Timing 80ns access • Configurations 512K x 8 256K x 16/512K x 8 • Boot Block Starting Word Address Top (3FFFFh) Bottom (00000h) • Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) • Packages 44-pin SOP (MT28F400B3) 48-pin TSOP Type I (MT28F400B3) 40-pin TSOP Type I (MT28F004B3)
NOTE:
MARKING
-8 MT28F004B3 MT28F400B3 T B None ET SG WG VG
GENERAL DESCRIPTION
The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process. The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures. Refer to Micron’s Web site (www.micron.com/flash) for the latest data sheet.
1. This generation of devices does not support 12V VPP compatibility production programming; however, 5V V PP application production programming can be used with no loss of performance. Part Number Example:
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MT28F400B3SG-8 T
4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01
1
©2001, Micron Technology, Inc.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
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4Mb SMART 3 BOOT BLOCK FLASH MEMORY
PIN ASSIGNMENT (Top View) 48-PIN TSOP TYPE I
A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# VPP WP# NC NC A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0
VPP WP# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44-PIN SOP
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/(A-1) DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC
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ORDER NUMBER AND PART MARKING MT28F400B3WG-8 B MT28F400B3WG-8 T MT28F400B3WG-8 BET MT28F400B3WG-8 TET
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ORDER NUMBER AND PART MARKING MT28F400B3SG-8 B MT28F400B3SG-8 T MT28F400B3SG-8 BET MT28F400B3SG-8 TET
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40-PIN TSOP TYPE I
A16 A15 A14 A13 A12 A11 A9 A8 WE# RP# VPP WP# A18 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 A17 VSS NC NC A10 DQ7 DQ6 DQ5 DQ4 VCC VCC NC DQ3 DQ2 DQ1 DQ0 OE# VSS CE# A0
ORDER NUMBER AND PART MARKING MT28F004B3VG-8 B MT28F004B3VG-8 T MT28F004B3VG-8 BET MT28F004B3VG-8 TET
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4Mb Smart 3 Boot Block Flash Memory F45_3.p65 – Rev. 3, Pub. 12/01
2
Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2001, Micron Technology, Inc.
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4Mb SMART 3 BOOT BLOCK FLASH MEMORY
FUNCTIONAL BLOCK DIAGRAM
8
Input Buffer
BYTE#1
I/O Control Logic 7 16KB Boot Block 18 (19) 9 9
(10)
Input Buffer
Addr.
A0–A17/(A18) A9
Buffer/ Latch
8KB Parameter Block 8KB Parameter Block 96KB Main Block Input Buffer A-1 Input Data Latch/Mux 16 128KB Main Block
X - Decoder/Block Erase Control
Addr. Power (Current) Control Counter
128KB Main Block
DQ15/(A - 1)1 DQ8–DQ141
128KB Main Bloc.