(RVT Series) RECTIFIER DIODE
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VT RVT
HIGH VOLTAGE 50 mA SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS F...
Description
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VT RVT
HIGH VOLTAGE 50 mA SILICON RECTIFIERS
SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS FAST RECOVERY (R_SERIES) AVALANCHE CHARACTERISTICS LOW LEAKAGE
EDI Type VT1000 VT1200 VT1500 RVT1000 RVT1200 RVT1500
PRV Volts 10,000 12,000 15,000 10,000 12,000 15,000
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REVERSE RECOVERY TIME (Fig.4) 100 ns max. 100 ns max. 100 ns max.
DataShee
ELECTRICAL CHARACTERISTICS (at TA =25 o C Unless Otherwise Specified)
Average Rectified Forward Current @ 50 C, IO Max. Peak Surge Current, IFSM (8.3 ms) Max. Forward Voltage Drop @ 50 mA, V F Max. DC Reverse Current @ PRV and 25 C, IR Max. DC Reverse Current @ PRV and100 C, I R Ambient Operating Temperature Range, T A Storage Temperature Range, T STG
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50 mA 5 Amp 28Volts 1 25
A A
-55 to + 125oC -55 to + 150oC
NOTES:
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and soldering point to prevent damage from excess heat. 2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
EDI reserves the right to change these specifications at any time without notice.
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VT RVT
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100 100
FIG.2
NON- REPETITIVE SURGE CURRENT
0.1SEC 1.0SEC
% RATED FWD CURRENT
% MAXIMUM SURGE
75
75
50
50
25
25
0 0 25 50 75 100
O
0 125 150 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60
AMBIENT TEMPERATURE ( C)
CYCLES(60 Hz)
FIG.3
A...
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