2SJ246

www.DataSheet4U.com 2SJ246 L , 2SJ246 S SILICON P-CHANNEL MOS FET Application DPAK–1 High speed power switching 4 4 Features 12 3 12 3 Low on–resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source. Suitable for Switching regulator, DC – DC converter 2, 4 1 3 1. Gate 2. Drain 3. Source 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C) e DataShe DataSheet4U.com Symbol Ratings Unit ——————————————————————————————————————————— Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body–drain diode reverse drain current Channel dissipation Channel temperature Storage temperature VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg –30 ±20 –7 –28 –7 20 150 –55 to +150 V V A A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 2SJ246 L , 2SJ246 S Table 2 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source ...