2N1671B

www.DataSheet4U.com 2N1671 – 2N1671A – 2N1671B PN BAR-TYPE SILICON UNIJUNCTION TRANSISTORS They are designed for medium-power switching, oscillator and pulse timing circuits. Package outline is similar to TO-5 except Highly Stable Negative Resistance and Firing Voltage Low Firing Current High Pulse Curent Capabilities Simplified Circuit Design ABSOLUTE MAXIMUM RATINGS Symbol VB1E VB2E VB1B2 IFRMS IEM PTOT TJ TSTG Ratings DataSheet4U.com Base 1 – Emitter Reverse Voltage Value 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 30 Unit V DataShee Base 2 – Emitter Reverse Voltage 30 V Interbase Voltage 35 V RMS Emitter Current 50 mA Emitter Peak Current 2 A Total Power Dissipation 450 mW Maximum Junction 150 °C -55 to +150 Storage Temperature Range This data guaranteed in addition to JEDEC registered data DataSheet4U.com COMSET SEMICONDUCTORS DataSheet 4 U .com 1/2 www.DataSheet4U.com 2N1671 – 2N1671A – 2N1671B ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol IEB2O VEB1(sat) RBBO Ratings Emitter Reverse Current Test Condition(s) VB2E=30 V, IB1= 0 Min Typ Mx Unit 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 2N1671 2N1671A 2N1671B 4.7 4.7 4.7 0.47 0.47 0.47 -12 -12 -0.2 5 5 5 9.1 9.1 9.1 0.62 0.62 0.62 8 8 8 25 25 6 µA Emitt...