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MS2267...
www.DataSheet4U.com
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2267
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
Features
960 – 1215MHz 50 VOLTS 5:1 VSWR CAPABILITY @ RATED CONDITIONS INPUT/OUTPUT MATCHING POUT = 250 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2267 is a high power Class C
NPN transistor specifically designed for TACAN/DME applications.
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DataShee
This device is capable of operation under moderate pulse width and duty cycles. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2267 utilizes an emitter ballasted die geometry capable of operating into a 5:1 VSWR @ 1.0 dB overdrive.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC Vcc TJ T STG Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
Parameter
Power Dissipation* (T C ≤ 90° C)
Value
575 20 50 250 -65 to +200
Unit
W A V °C °C
Thermal Data
RTH(J-C) Junction-case Thermal Resistance∗
(1)
0.28
° C/W
* Applies only to rated RF amplifier operation (1) Infra-red scan of hot spot junction temperature at rated RF operating conditions
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DataSheet 4...