MS2231

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2231 RF AND MICROWAVE TRANSISTORS L-BAND APPLICATIONS Features REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT / OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. GP = 6.0 dB GAIN DESCRIPTION: The MS2231 is a high-power Class C transistor specifically designed for L-Band Radar pulsed driver applications. DataSheet4U.com This device is capable of operation over a wide range of pulse widths, duty cycles, and termperatures and is capable of withstanding 3:1 output WSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2231 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100° C) 270 13.5 32 250 – 65 to + 200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Thermal Data RTH(j-c) Junction-Case Thermal Resistance* 0.55 ° C/W *Applies only to rated RF amplifier operation DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCED...