MS2223

www.DataSheet4U.com MS2223 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features · · · · · · · GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 70 W MINIMUM Gp = 6.7 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold DataSheet4U.com metallization and emitter ballasting provides long term reliability under long pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Parameter (Tcase = 25° C) 32 8.0 200 200 - 65 to + 200 Value Unit V A W °C °C Thermal Data RTH(j-c) * Applies only to rated RF operation. Junction-Case Thermal Resistance* 0.68 ° C/W DataSheet4U.com MSC0XXXA.DOC 5-13-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2223 STATIC ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) Symbol BVCBO BVCER BVEBO Test Conditions IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V IE = 0 mA RBE = 10 W IC = 0 mA VB E = 0 V IC = 2A Min. 55 55 3.5 ---20 Value Typ. ---------------- Max. ---------20 200 Unit V V V mA ---- ICES hFE DYNAMIC Symbol POUT et4U.com Test Conditions f ...