MS2215

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2215 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 150 W MIN. WITH 7.5 dB Gain DESCRIPTION: The MS2215 is designed for specialized avionics applications, including Mode-S, TCAS and JTIDS where power is provided DataSheet4U.com under pulse formats utilizing short pulse widths and high burst or overall duty cycles. DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ °C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature * Parameter Value 300 16.5 35 250 - 65 to + 200 Unit A V °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance * 0.57 ° C/W * Applies only to rated RF amplifier operation DataSheet4U.com MSC0921.PDF 9-23-98 DataSheet 4 U .com www.DataSheet4U.com MS2215 STATIC ELECTRICAL SPECIFICATIONS (Tcase (Tcase = 25° C) Symbol BVCBO BVEBO BVCES Test Conditions Min. IC = 60 mA IE = 10 mA IC = 100 mA VCE = 35 V VCE = 5V IE = 0 mA IC = 0 mA 55 3.5 55 ---20 Value Typ. 65 ------------- Max. ---------25 ---- Unit V V V mA ---- ICES hFE IC = 5 A et4U.com DataShee DataSheet4U.com DYNAMIC Symbol POUT VC GP Note: Test Conditions Min. f = 960 - 1215 MHz f =...