MS2213

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2213 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS Features REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB Gain DESCRIPTION: The MS2213 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2213 is supplied in the hermetic metal/ceramic package with internal input matching structures. DataSheet4U.com DataShee ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ 85° C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature Parameter Value 75 3.5 40 250 - 65 to + 200 Unit W A V °C °C Thermal Data RTH(j-c) DataSheet4U.com Junction-Case Thermal Resistance 2.2 ° C/W * Applies only to rated RF amplifier operation MSC0920.PDF 9-23-98 DataSheet 4 U .com www.DataSheet4U.com MS2213 STATIC ELECTRICAL SPECIFICATIONS (Tcase ...