AOT428

www.DataSheet4U.com AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT428 is Pb-free (meets ROHS & Sony 259 specifications). AOT428L is a Green Product ordering option. AOT428 and AOT428L are electrically identical. TO-220 D Features VDS (V) = 75V ID = 80A (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 10V) Top View Drain Connected to Tab e DataShe G S DataSheet4U.com G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 ±30 80 57 300 60 180 115 58 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Steady-State Symbol RθJA RθJC Typ 60 0.7 Max 75 1.3 Units °C/W °C/W DataSheet4U.com Alpha & Omega Semiconductor, Ltd. DataSheet 4 U .com www.DataSheet4U.com AOT428 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=60V, VGS=0V TJ=55°C VDS=0V, VGS=±30V VDS=VGS, ID=250µA VGS=10V, VDS=5V V...