Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power Transistor
Featu...
Final data
SPP03N60C3, SPB03N60C3 SPA03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 3.2 V Ω A
Cool MOS™ Power
Transistor
Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
www.DataSheet4U.com Extreme
P-TO220-3-31
P-TO263-3-2
P-TO220-3-1
dv/dt rated
1 P-TO220-3-31 2 3
High peak current capability Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type SPP03N60C3 SPB03N60C3 SPA03N60C3
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4401 Q67040-S4391
Marking 03N60C3 03N60C3 03N60C3
P-TO220-3-31 -
Maximum Ratings Parameter Continuous drain current
TC = 25 °C TC = 100 °C
Symbol ID 3.2 2 ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg 9.6 100 0.2 3.2 ±20 ±30 38
Value SPP_B SPA
Unit A 3.21) 21) 9.6 100 0.2 3.2 ±20 ±30 29.7 W °C A V A mJ
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=2.4A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=3.2A, VDD =50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature
-55...+150
Page 1
2003-10-02
Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 3.2 A, Tj = 125 °C
SPP03N60C3, SPB03N60C3 SPA03N60C3
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics
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Parameter Thermal resistance, junction - case Thermal resistance, j...