SFD30N06

www.DataSheet4U.com SemiWell Semiconductor SFD30N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ Low RDS(on) (0.04Ω )@VGS=10V Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ◀ { { 2. Drain ● 1. Gate ▲ ● ● { 3. Source General Description This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products. D-PACK (TO-252) 2 1 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TA = 25 °C) Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) Parameter DataSheet4U.com Value 60 23 15 92 ±20 430 7.0 2.5 44 0.35 - 55 ~ 150 300 Units V A A A V mJ V/ns W W W/°C °C °C DataShe e Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-C...