N-Channel MOSFET
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S DU/D3055L2
S amHop Microelectronics C orp. May,2004 ver1.1
N-C hannel E nhancement Mode Field E ...
Description
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S DU/D3055L2
S amHop Microelectronics C orp. May,2004 ver1.1
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
15A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
60 @ V G S = 4.5V 70 @ V G S = 2.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
S
DataSheet4U.com AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed (300ms Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit 20 12 15 25 15 50 -55 to 150
Unit V V A A A W C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
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R JC R JA
1
3 50
C /W C /W
Thermal R esistance, Junction-to-Ambient
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S DU/D3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) V GS = 0V, ID = 250uA V DS = 20V, V GS = 0V V GS = 8V, V DS = 0V V DS = V GS , ID = 250uA V GS =4.5V, ID = 6.0A V GS =2.5V, ID = 5.2A 20 17 705 280 65 V DD = 10V, ID = 1A, V GE N = 4.5V...
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