G03H1202

www.DataSheet4U.com IGA03N120H2 HighSpeed 2-Technology C Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control G E P-TO220-3-31 (FullPAK) P-TO220-3-34 (FullPAK) Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGA03N120H2 IGA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj,max 150°C 150°C Marking G03H1202 G03H1202 Package P-TO-220-3-31 P-TO-220-3-34 Ordering Code Q67040-S4648 Q67040-S4654 Maximum Ratings Parameter Collector-emitter voltage TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter voltage Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -40...+150 260 °C VGE Ptot ±20 29 V W ICpuls Triangular collector peak current (VGS = 15V) Symbol Value 1200 8.2 9 9 Unit V A DataShee DataSheet4U.comV C E ICpk DataSheet4U.com Power Semiconductors DataSheet 4 U .com 1 Mar-04, Rev. 2.0 www.DataSheet4U.com IGA03N120H2 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient RthJA P-TO-220-3-31 P-TO-220-3-34 64 RthJC 4.3 K/W Symbol Conditions Max. Value...