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STW52NK25Z

ST Microelectronics

N-Channel MOSFET

STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS...


ST Microelectronics

STW52NK25Z

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STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W s TYPICAL RDS(on) = 0.033 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s GATE CHARGE MINIMIZED s VERY LOW INTRINSIC CAPACITANCES s VERY GOOD MANUFACTURING REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING DC CHOPPERs s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Figure 1: Package 3 2 1 TO-247 Figure 2: Internal Schematic Diagram Table 2: Order Codes SALES TYPE STW52NK25Z MARKING W52NK25Z PACKAGE TO-247 PACKAGING TUBE November 2004 Rev. 2 1/10 STW52NK25Z Table 3: Absolute Maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuous) at TC = 25°C ID Drain Current (continuous) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) dv/dt (1) Peak Diode Recovery voltage s...




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