STW50N10

www.DataSheet4U.com STW50N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST W50N10 s s s s s s s V DSS 100 V R DS(on) < 0.035 Ω ID 50 A TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-247 3 2 1 APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s POWER MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCRONOUS RECTIFICATION INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com DataSh ee ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T stg Tj St orage Temperature Max. Operating Junction Temperature o o Value 100 100 ± 20 50 35 200 180 1.2 -65 to 175 175 Uni t V V V A A A W W/ o C o o C C () Pulse width limited by safe operating area ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX January 1998 1/8 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com STW50N10 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max T yp 0.83 30 0.1 300 o o C/W C/W o C/W o C AVALANCHE CHARACTERI...