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STW50N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE ST W50N10
s s s s s s s
V DSS 100 V
R DS(on) < 0.035 Ω
ID 50 A
TYPICAL RDS(on) = 0.027 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION TO-247
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