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DIM100WHS17-A000

Dynex Semiconductor

IGBT Power Module

www.DataSheet4U.com DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I...


Dynex Semiconductor

DIM100WHS17-A000

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www.DataSheet4U.com DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS I I Inverters 7(E2) Motor Controllers 6(G2) The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM100WHS17-A000 is a half bridge 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area DataSheet4U.com (RBSOA) plus full 10µs short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 1(E1C2) 2(E2) 3(C1) 4(G1) 5(E1) DataSh Fig. 1 Half bridge circuit diagram ee ORDERING INFORMATION Order As: DIM100WHS17-A000 Note: When ordering, please use the whole part number. Outline type code: W (See package details for further information) Fig. 2 Module outline Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/8 www.dynexsemi.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com ...




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