182A934

www.DataSheet4U.com 32K x 8 Radiation Hardened Static RAM – 5 V Features 167A690 182A934 Product Description Other Read/Write Cycle Times ≤30 ns (-55 °C to 125°C) SMD Number 5962H92153 Asynchronous Operation CMOS or TTL Compatible I/O Single 5 V ±10% Power Supply Low Operating Power Packaging Options 36-Lead Flat Pack (0.630” x 0.650”) 28-Lead DIP, MIL-STD-1835, CDIP2-T28 Radiation Fabricated with Bulk CMOS 0.8 µm Process Total Dose Hardness through 1x106 rad(Si) Neutron Hardness through 1x1014 N/cm2 Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s Soft Error Rate of < 1x10-11 Upsets/Bit-Day Dose Rate Survivability through 1x1012 rad(Si)/s Latchup Free taS Da aShee Dat DataSheet4U.com General Description The 32K x 8 radiation hardened static RAM is a high performance, low power device designed and fabricated in 0.8 µm Radiation Hardened Complementary Metal Oxide Semiconductor (RHCMOS) technology. BAE SYSTEMS’ device is designed for radiation environments using industry standard functionality. The memory can be personalized for either CMOS or Transistor Transistor Logic (TTL) input receivers. The SRAM operates over the full military temperature range and requires a single 5 V ±10% power supply. Power consumption is typically less than 20 mW/MHz in operation, and less than 10 mW in the low power disabled mode. The SRAM read operation is fully asynchronous, with an associated typical access time of 20 nanoseconds. BAE SYST...