SY110

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EE-SY110/113/171 Compact Reflective Phototransistor Output
Low-profiled model with an overall height of only 3 mm (EE-SY171)
Models with a circuit integrated into molded housing provide special cost advantages (EE-SY110/113)
Model with a filter reduces effects of external visible light (EE-SY113) Ordering Information Appearance Sensing method Sensing Sensing object distance Reflective 3.5 mm 4.4 mm 5 mm White paper with reflection factor of 90% Output configuration Weight Part number EE-SY171 EE-SY113 EE-SY110 Phototransistor 0.3 g Approx. 0.5 g DataShee DataSheet4U.com Approx. 0.4 g Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Item Input Forward current Pulse forward current Reverse voltage Output Collector-emitter voltage Collector current Collector dissipation Ambient temperature Operating Storage Symbol IF IFP VR VCEO IC PC Topr Tstg Rated value 50 mA* 1 A** 4V 30 V 20 mA 100 mW* -40°C to 85°C (-40°F to 185°F) -40°C to 85°C (-40°F to 185°F) *Refer to Engineering Data if the ambient temperature is not within the normal room temperature range. **This value was measured with a pulse width of 10 µs and a repeating frequency of 100 Hz. DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com EE-SY110/113/171 EE-SY110/113/171
CHARACTERISTICS (TA = 25°C) Item Emitter Forward voltage Reverse current Peak emission wavelength Receiver Dark current Peak spectral sensitivity wavelength Combination Light current Symbol VF IR λp(L) ID...