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PD - 91358E
IRLZ24NS/L
Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.06Ω
G
ID = 18A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of DataSheet4U.com its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications.
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D 2 P ak T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
18 13 72 3.8 45 0.30 ±16 68 11 4.5 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/°C V mJ A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
––– –––
Max.
3.3 40
Units
°C/W 5/12/98
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IRLZ24NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA
0.060 VGS = 10V, ID = 11A Static Drain-to-Source On-Resistance 0.075 Ω VGS = 5.0V, ID = 11A 0.105 VGS = 4.0V, ID = 9.0A Gate Threshold Voltage 2.0 V V DS = V GS, ID = 250µA Forward Transconductance ––– S VDS = 25V, ID = 11A
25 VDS = 55V, VGS = 0V µA Drain-to-Source Leakage Current 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 16V nA Gate-to-Source Reverse Leakage -100 VGS = -16V Total Gate Charge 15 ID = 11A Gate-to-Source Charge 3.7 nC VDS = 44V Gate-to-Drain ("Miller") Charge 8.5 VGS = 5.0V, See Fig. 6 and 13
Turn-On Delay Time ––– VDD = 28V Rise Time ––– ID = 11A ns Turn-Off Delay Time ––– R G = 12Ω, VGS = 5.0V Fall Time ––– RD = 2.4Ω, See Fig. 10
Between lead, Internal Source Inductance ––– 7.5 ––– nH and center of die contact DataSheet4U.com Input Capacitance ––– 480 ––– VGS = 0V Output Capacitance ––– 130 ––– pF VDS = 25V Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Min. 55 ––– ––– ––– ––– 1.0 8.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.061 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 7.1 74 20 29
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Source-Drain Ratings and Characteristics
IS
I SM
V SD trr Q rr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol ––– ––– 18 showing the A G integral reverse ––– ––– 72 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V ––– 60 90 ns TJ = 25°C, IF = 11A ––– 130 200 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
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IRLZ24NS/L
100
TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
100
ID , D rain-to-S ource C urrent (A )
10
ID , D rain-to-S ource C urrent (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
2 .5V
1
1
2 .5V 2 0µ s P U LS E W ID T H T J = 2 5°C
0.1 1 10
0.1
A
0.1 0.1 1
2 0µ s P U LS E W ID T H T J = 1 75 °C
10
100
A
100
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S .