MRF20060S

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class A and class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. Guaranteed Two–tone Performance at 2000 MHz, 26 Volts Output Power — 60 Watts (PEP) Power Gain — 9 dB Efficiency — 33% Intermodulation Distortion — –30 dBc Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power Designed for FM, TDMA, CDMA and Multi–Carrier Applications MRF20060 MRF20060S 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR CASE 451–04, STYLE 1 (MRF20060) ee DataSh DataSheet4U.com CASE 451A–01, STYLE 1 (MRF20060S) MAXIMUM RATINGS Rating Collector–Emitter Voltage (IB = 0 mA) Collector–Emitter Voltage Collector–Base Voltage Collector–Emitter Voltage (RBE = 100 Ohm) Base–Emitter Voltage Collector Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Juncti...