MRF20030

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers. Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics Output Power — 30 Watts (PEP) Power Gain — 9.8 dB Efficiency — 34% Intermodulation Distortion — –28 dBc Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power — 30 Watts Power Gain — 10.5 dB Efficiency — 40% Excellent Thermal Stability Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Designed for FM, TDMA, CDMA, and Multi–Carrier Applications MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Collector–Base Voltage Collector–Emitter Voltage (RBE = 100 Ω) Emitter–Base Voltage Collector Current – Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol MRF20030 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR CASE 395D–03, STYLE 1 Valu...