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Am49DL640AG
Data Sheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document.
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DataSheet4U.com Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions.
Publication Number 26549 Revision A
Amendment +3 Issue Date April 1, 2003
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PRELIMINARY
Am49DL640AG
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) pSRAM DISTINCTIVE CHARACTERISTICS
MCP Features
■ Power supply voltage of 2.7 to 3.3 volt ■ High performance
— Access time as fast as 70 ns
■ Minimum 1 million erase cycles guaranteed per sector ■ 20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
■ Data Management Software (DMS)
— AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations
■ Package
— 73-Ball FBGA
■ Operating Temperature
— –40°C to +85°C
Flash Memory Features
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
— Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations
■ Supports Common Flash Memory Interface (CFI) ■ Program/Erase Suspend/Erase Resume
— Suspends program/erase operations to allow programming/erasing in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status of program or erase cycles
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■ Flexible Bank architecture
■ Unlock Bypass Program command
— Reduces overall programming time when issuing multiple — Read may occur in any of the three banks not being written program command sequences or erased. DataSheet4U.com — Four banks may be grouped by customer to achieve desired HARDWARE FEATURES bank divisions.
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■ Manufactured on 0.17 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
— Factory locked and identifiable: 16 bytes available for secure, rand.