DatasheetsPDF.com

AM49DL640AG Dataheets PDF



Part Number AM49DL640AG
Manufacturers Advanced Micro Devices
Logo Advanced Micro Devices
Description Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
Datasheet AM49DL640AG DatasheetAM49DL640AG Datasheet (PDF)

www.DataSheet4U.com Am49DL640AG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have .

  AM49DL640AG   AM49DL640AG



Document
www.DataSheet4U.com Am49DL640AG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary. Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order these products, please use only the Ordering Part Numbers listed in this document. DataShee For More Information DataSheet4U.com Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions. Publication Number 26549 Revision A Amendment +3 Issue Date April 1, 2003 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com PRELIMINARY Am49DL640AG Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) pSRAM DISTINCTIVE CHARACTERISTICS MCP Features ■ Power supply voltage of 2.7 to 3.3 volt ■ High performance — Access time as fast as 70 ns ■ Minimum 1 million erase cycles guaranteed per sector ■ 20 year data retention at 125°C — Reliable operation for the life of the system SOFTWARE FEATURES ■ Data Management Software (DMS) — AMD-supplied software manages data programming, enabling EEPROM emulation — Eases historical sector erase flash limitations ■ Package — 73-Ball FBGA ■ Operating Temperature — –40°C to +85°C Flash Memory Features ARCHITECTURAL ADVANTAGES ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while executing erase/program functions in another bank. — Zero latency between read and write operations ■ Supports Common Flash Memory Interface (CFI) ■ Program/Erase Suspend/Erase Resume — Suspends program/erase operations to allow programming/erasing in same bank ■ Data# Polling and Toggle Bits — Provides a software method of detecting the status of program or erase cycles et4U.com ■ Flexible Bank architecture ■ Unlock Bypass Program command — Reduces overall programming time when issuing multiple — Read may occur in any of the three banks not being written program command sequences or erased. DataSheet4U.com — Four banks may be grouped by customer to achieve desired HARDWARE FEATURES bank divisions. DataShee ■ Manufactured on 0.17 µm process technology ■ SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector — Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data — Customer lockable: Sector is one-time programmable. Once sector is locked, data cannot be changed. ■ Any combination of sectors can be erased ■ Ready/Busy# output (RY/BY#) — Hardware method for detecting program or erase cycle completion ■ Hardware reset pin (RESET#) — Hardware method of resetting the internal state machine to the read mode ■ WP#/ACC input pin — Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status — Acceleration (ACC) function accelerates program timing ■ Zero Power Operation — Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Boot sectors — Top and bottom boot sectors in the same device ■ Sector protection — Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector — Temporary Sector Unprotect allows changing data in protected sectors in-system ■ Compatible with JEDEC standards — Pinout and software compatible with single-power-supply flash standard PERFORMANCE CHARACTERISTICS ■ High performance — Access time as fast as 70 ns — Program time: 4 µs/word typical utilizing Accelerate function pSRAM Features ■ Power dissipation — Operating: 20 mA maximum — Standby: 70 µA maximum ■ Ultra low power consumption (typical values) — 2 mA active read current at 1 MHz — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode ■ CE1s# and CE2s Chip Select ■ Power down features using CE1s# and CE2s ■ Data retention supply voltage: 2.7 to 3.3 volt ■ Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8) DataSheet4U.com This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this produc.


AM45DL3208G AM49DL640AG AM49DL640BG


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)