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IS93C66-3

ISSI

4096-BIT SERIAL ELECTRICALLY ERASABLE PROM

www.DataSheet4U.com IS93C66-3 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM FEATURES OVERVIEW ISSI ® MARCH 2001 • Sta...


ISSI

IS93C66-3

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www.DataSheet4U.com IS93C66-3 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM FEATURES OVERVIEW ISSI ® MARCH 2001 State-of-the-art architecture The IS93C66-3 is a low cost 4,096-bit, non-volatile, serial E2PROM. It is fabricated using ISSI's advanced CMOS — Non-volatile data storage E2PROM technology. The IS93C66-3 provides efficient — Low voltage operation: non-volatile read/write memory arranged as 256 registers 3.0V (Vcc = 2.7V to 6.0V) of 16 bits each. Seven 11-bit instructions control the — Full TTL compatible inputs and outputs operation of the device, which includes read, write, and — Auto increment for efficient data dump mode enable functions. The data out pin (DOUT) indicates Low voltage read operation the status of the device during in the self-timed non-volatile — Down to 2.7V programming cycle. Hardware and software write protection The self-timed write cycle includes an automatic erase— Defaults to write-disabled state at power-up before-write capability. To protect against inadvertent — Software instructions for write-enable/disable writes, the WRITE instruction is accepted only while the 2 chip is in the write enabled state. Data is written in 16 bits Advanced low voltage CMOS E PROM per write instruction into the selected register. If Chip technology Select (CS) is brought HIGH after initiation of the write cycle, Versatile, easy-to-use interface the Data Output (DOUT) pin will indicate the READY/BUSY — Self-timed programming cycle status of the ch...




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