M53230810CB0

www.DataSheet4U.com DRAM MODULE M53230800CW0/CB0 & M53230810CW0/CB0 EDO Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung M5323080(1)0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5323080(1)0C consists of sixteen CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M5323080(1)0C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230800CW0/CB0 M53230810CW0/CB0 FEATURES Part Identification - M53230800CW0-C(4096 cycles/64ms Ref, SOJ, Solder) - M53230800CB0-C(4096 cycles/64ms Ref, SOJ, Gold) - M53230810CW0-C(2048 cycles/32ms Ref, SOJ, Solder) - M53230810CB0-C(2048 cycles/32ms Ref, SOJ, Gold) Extended Data Out CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V±10% power supply PERFORMANCE RANGE Speed -50 -60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns 1st Gen. JEDEC standard PDPin & pinout PCB : Height(1000mil), double sided component PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 RAS1 RAS0 NC NC Pin 37 38 39 40 41 ...