S2055N

www.DataSheet4U.com S2055N TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE S2055N COLOR TV HORIZONTAL OUTPUT APPLICATIONS High Voltage Low Saturation Voltage High Speed Built−in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. : VCES = 1500 V : VCE (sat) = 5 V (Max.) : tf = 0.3µs (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTICS Collector−Emitter Voltage Emitter−Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance DC Pulse SYMBOL VCES VEBO IC ICP IB PC Tj Tstg Rth (j−c) RATING 1500 5 8 15 4 50 150 −55~150 UNIT V V A A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16E3A DataShee 2.5 °C / W DataSheet4U.com EQUIVALENT CIRCUIT Weight: 5.5 g (typ.) MARKING S2055N Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. DataSheet4U.com 1 DataSheet 4 U .com 2004-07-07 www.DataSheet4U.com S2055N ELECTRICAL CHARACTERISTICS (Tc = 25°C) CHARACTERISTICS Collector Cut−off Current Emitter−Base Breakdown Voltage DC Current Gain SYMBOL ICBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF VCEX (sus) fT Cob tstg tf TEST CONDITION VCB = 1500 V, VBE = 0 IE = 0.4 A, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 4.5 A IC = 4.5 A, IB = 2 A IC = 4.5 A, IB = 1 A IC = 4.5 A, IB = 1 A IF = 6 A L = 40 mH, IC = 0.5A VBE = −1.7 V VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 4.5 A, IB1 (end) = 1 A fH = 15.75 kHz MIN ―...