2SC6016

www.DataSheet4U.com Ordering number : EN8559 2SC6016 2SC6016 Applications NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Relay drivers, lamp drivers, motor drivers, flash. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C DataSheet4U.com Conditions Ratings 40 30 6 8 11 1.2 1.3 3.5 150 --55 to +150 Unit V V V A A A W W °C °C DataSh ee Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE Conditions VCB=30V, IE=0A VEB=4V, IC=0A VCE=2V, IC=500mA Ratings min typ max 0.1 0.1 250 400 Unit µA µA Marking : QD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with...