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2SC6017

Sanyo Semicon Device

NPN Epitaxial Planar Silicon Transistors

www.DataSheet4U.com Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA216...


Sanyo Semicon Device

2SC6017

File Download Download 2SC6017 Datasheet


Description
www.DataSheet4U.com Ordering number : ENN8275 2SA2169 / 2SC6017 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2169 / 2SC6017 Applications High-Current Switching Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications ( ) : 2SA2169 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤100µs Conditions Ratings (-50)100 (--)50 Unit V V V A A A W W °C °C DataSheet4U.com (-)6 (--)10 (--)13 (-)2 0.95 DataSh ee Tc=25°C 20 150 --55 to +150 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitterr Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)1A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz IC=(--)5A, IB=(-)250mA IC=(--)5A, IB=(-)250mA 200 (130)200 (90)60 (--290)180 (--)0.93 (--580)360 (--)1.4 Ratings min typ max (--)10 (--)10 (560)700 MHz pF mV V Unit µA µA Continued on next page. Any and all SANYO products described or contained herein do not have s...




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