2SA2154

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA2154 2SA2154 General-Purpose Amplifier Applications High voltage and high current : VCEO = −50 V, IC = −100 mA (max) Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) High hFE : hFE = 120~400 Complementary to 2SC6026 Absolute Maximum Ratings (Ta = 25°C) 0.6±0.05 0.35±0.05 0.15±0.05 Unit: mm 0.2±0.05 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 -0.04 Characteristic Symbol Rating Unit 0.48 Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V 0.1±0.05 Emitter-base voltage VEBO −5 V Collector current Base current Collector power dissipation IC −100 mA IB −30 mA PC 50 mW 1.BASE 2.EMITTER fSM 3.COLLECTOR Junction temperature Storage temperature range Tj 150 °C JEDEC ― Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-1E1A reliability significantly even if the operating conditions (i.e. Weight: 0.6 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, et...