2SA2101

www.DataSheet4U.com Power Transistors 2SA2101 Silicon PNP epitaxial planar type Unit: mm ■ Features High-speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat) Superior forward current transfer ratio hFE linearity TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.55±0.15 ■ Absolute Maximum Ratings TC = 25°C 1 2 2.54±0.30 5.08±0.50 3 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25°C Ta = 25°C Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −60 −60 −6 −2 −4 15 2 150 −55 to +150 Unit V V V A A 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee Marking Symbol: A2101 Internal Connection C B DataSheet4U.com W °C °C E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio Symbol VCEO ICBO ICEO hFE1 hFE2 hFE3 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall tim...