2SA2118

www.DataSheet4U.com Power Transistors 2SA2118 Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output ■ Features Satisfactory linearity of forward current transfer ratio hFE Dielectric breakdown voltage of the package: 5 kV Full-pack package which can be installed to the heat sink with one screw. Unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 3.0±0.5 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −200 −180 −6 −2 −3 25 2.0 Unit V V V A A W °C °C Solder Dip 0.8±0.1 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee DataSheet4U.com 150 −55 to +150 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Base-emitter voltage Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCBO VCEO VEBO VBE ICBO IEBO hFE1 * Conditions IC = −50 µA, IE = 0 IC = −5 mA, IB = 0 IE = −500 µA, IC = 0 VCE = −10 V, IC = −400 mA VCB = −200 V, IE = 0 VEB = −4 V, IC = 0 VCE = −10 V, IC = −150 mA ...