2SA2162

www.DataSheet4U.com Transistors 2SA2162 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6036 0.05 0.33+ −0.02 Unit: mm 0.05 0.10+ −0.02  Features  Low collector-emitter saturation voltage VCE(sat)  SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 3 0.15 min. 0.15 max. 0.80±0.05 1.20±0.05 0.52±0.03 5° 0 to 0.01 0.15 min. 0.05 0.23+ −0.02 1 2 (0.40) (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating –15 –12 –5 –500 –1 100 125 –55 to +125 Unit V V V mA A mW °C °C 1: Base 2: Emitter 3: Collecter 5° SSSMini3-F1 Package Marking Symbol : 2U DataSheet4U.com  Electrical Characteristics Ta = 25°C±3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO hFE VCE(sat) fT Cob Conditions IC = –10 µA, IE = 0 IC = –1 mA, IB = 0 IE = –10 µA, IC = 0 VCB = –10 V, IE = 0 VCE = –2 V, IC = –10 mA IC = –200 mA, IB...