2SA2164

www.DataSheet4U.com Transistors 2SA2164 Silicon PNP epitaxial planar type For high-frequency amplification 0.33+0.05 –0.02 Unit: mm 0.10+0.05 –0.02  Features  High transfer ratio fT  SSS-Mini type package, allowing downsizing of the equipment and　 automatic insertion through the tape packing. 3 0.15 min. 0.15 max. 0.80±0.05 1.20±0.05 0.52±0.03 5° 0 to 0.01 0.15 min. 0.23+0.05 –0.02 1 2 (0.40) (0.40) 0.80±0.05 1.20±0.05  Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating –30 –20 –5 –30 100 125 –55 to +125 Unit V V V mA mW °C °C 1: Base 2: Emitter 3: Collector 5° SSSMini3-F1 Package Marking Symbol : E  Electrical Characteristics Ta = 25°C±3°C Parameter Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cut-off current (Base open) Emitter-base cut-off current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise figure Reverse transfer impedance Common-emitter reverse transfer capacitance Symbol VBE ICBO ICEO IEBO hFE VCE(sat) fT NF Zrb Cre DataSheet4U.com Conditions VCE = –10 V, IC = –1 mA VCB = –10 V, IE = 0 VCE = –20 V, IB = 0 VEB = –5 V, IC = 0 VCB = –10 V, IE = 1 mA IC = –10 mA, IB = –1 mA VCB = –10 V, IE = 1 mA, f = 200 MHz VCB = –10...