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Ordering number : ENN8357
2SA2168
2SA2168
Features
• •
PNP Epitaxial Planar Silicon Transistor
H...
www.DataSheet4U.com
Ordering number : ENN8357
2SA2168
2SA2168
Features
PNP Epitaxial Planar Silicon
Transistor
High-Voltage Switching Applications
Adoption of MBIT process. High breakdown voltage and large current capacity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings --180 --160 --6 --1.5 --2.5 1.5 150 --55 to +150 Unit V V V A A W °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg
DataSheet4U.com
Conditions VCB=-120V, IE=0A VEB=-4V, IC=0A VCE=-5V, IC=--100mA VCE=-5V, IC=--10mA VCE=-10V, IC=--50mA VCB=-10V, f=1MHz IC=--500mA, IB=--50mA IC=--500mA, IB=--50mA IC=--10µA, IE=0A IC=--1mA, RBE=∞ IE=--10µA, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --180 --160 --6 40 0.7 40 Ratings min typ max --1 --1 140* 80 120 22 --200 --0.85 --500 --1.2 MHz pF mV V V V V ns µs ns ...