79C0408

www.DataSheet4U.com 79C0408 4 Megabit (512k x 8-bit) EEPROM MCM CE 1 R E S R /B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 CE 2 CE 3 CE 4 I/O0-7 Memory Logic Diagram FEATURES: DESCRIPTION: Four 128k x 8-bit EEPROMs MCM Maxwell Technologies’ 79C0408 multi-chip module (MCM) RAD-PAK® radiation-hardened against natural memory features a greater than 100 krad (Si) total dose tolerDataSheet4U.com ance, depending upon space mission. Using Maxwell Technolspace radiation ogies’ patented radiation-hardened RAD-PAK® MCM Total dose hardness: - > 100 krad (Si), depending upon space mission packaging technology, the 79C0408 is the first radiation-hard Excellent Single Event Effects ened 4 Megabit MCM EEPROM for space applications. The - SEL > 120 MeV/mg/cm2 79C0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79C0408 is capable of in-system elec- SEU > 90 MeV/mg/cm2 read mode trical Byte and Page programmability. It has a 128 bytes Page - SEU = 18 MeV/mg/cm2 write mode Programming function to make its erase and write operations Package: faster. It also features Data Polling and a Ready/Busy signal to - 40 pin RAD-PAK® flat pack indicate the completion of erase and programming operations. - 40 pin X-Ray PakTM flat pack In the 79C0408, hardware data protection is provided with the - 40 pin Rad-Tolerant flat pack RES pin, in addition to noise protection on the WE signal. High speed: - 120, 150, and 200 ns maximum access times Software ...