TC59SM904AFTL

www.DataSheet4U.com TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS × 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 33,554,432-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION 7&60$)7$)7/ LV D &026 V\QFKURQRXV G\QDPLF UDQGRP DFFHVV PHPRU\ RUJDQL]HG DV ZRUGV  EDQNV × ×  ELWV DQG 7&60$)7$)7/ LV RUJDQL]HG DV  ZRUGV ×  EDQNV ×  ELWV DQG 7KH 7&60$)7$)7/ LV RUJDQL]HG DV  ZRUGV ×  EDQNV ×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tCK Clock Cycle Time (min) TC59SM916/M908/M904 -70 7 ns 40 ns 5.4 ns 56 ns TBD TBD TBD -75 7.5 ns 45 ns 5.4 ns 65 ns TBD TBD TBD -80 8 ns 48 ns 6 ns 68 ns TBD TBD TBD tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min) ICC1 Operation Current (max) (Single b...