(TC59SM904AFT - TC59SM916AFT) SDRAM
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TC59SM916/08/04AFT/AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLIT...
Description
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TC59SM916/08/04AFT/AFTL-70,-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
8,388,608-WORDS × 4BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 33,554,432-WORDS × 4BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION
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FEATURES
PARAMETER tCK Clock Cycle Time (min) TC59SM916/M908/M904 -70 7 ns 40 ns 5.4 ns 56 ns TBD TBD TBD -75 7.5 ns 45 ns 5.4 ns 65 ns TBD TBD TBD -80 8 ns 48 ns 6 ns 68 ns TBD TBD TBD
tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (min)
ICC1 Operation Current (max) (Single b...
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