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TC74AC10F

Toshiba Semiconductor

Triple 3-Input NAND Gate

TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate Th...


Toshiba Semiconductor

TC74AC10F

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Description
TC74AC10P/F TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC10P, TC74AC10F Triple 3-Input NAND Gate The TC74AC10 is an advanced high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features High speed: tpd = 5.0 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. Balanced propagation delays: tpLH ∼− tpHL Wide operating voltage range: VCC (opr) = 2 to 5.5 V Pin and function compatible with 74F10 Pin Assignment TC74AC10P TC74AC10F Weight DIP14-P-300-2.54 SOP14-P-300-1.27A : 0.96 g (typ.) : 0.18 g (typ.) Start of commercial production 1987-05 1 2014-03-01 IEC Logic Symbol TC74AC10P/F Truth Table A B C Y L X X H X L X H X X L H H H H L X: Don’t care Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC V...




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