HI-SINCERITY
MICROELECTRONICS CORP.
H2N6426
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6232 Issued Date : 1998.01.09...
HI-SINCERITY
MICROELECTRONICS CORP.
H2N6426
NPN EPITAXIAL PLANAR
TRANSISTOR
Spec. No. : HE6232 Issued Date : 1998.01.09 Revised Date : 2005.01.20 Page No. : 1/4
Description
Darlington
Transistor
Absolute Maximum Ratings
TO-92
Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum
Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
Maximum Voltages and Currents (TA=25°C) BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V BVCBO Collector to Base Voltage................