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STP5NB40FP Dataheets PDF



Part Number STP5NB40FP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
Datasheet STP5NB40FP DatasheetSTP5NB40FP Datasheet (PDF)

STP5NB40 STP5NB40FP N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP5NB40 400 V < 1.8 Ω 4.7 A STP5NB40FP 400 V < 1.8 Ω 4.7 A s TYPICAL RDS(on) = 1.47 Ω s EXTREMELY HIGH dv/dt CAPABILITY t(s)s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES ucs GATE CHARGE MINIMIZED rod )DESCRIPTION P t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- te cvanced family of power MOSFETs with outstanding le uperf.

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STP5NB40 STP5NB40FP N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP5NB40 400 V < 1.8 Ω 4.7 A STP5NB40FP 400 V < 1.8 Ω 4.7 A s TYPICAL RDS(on) = 1.47 Ω s EXTREMELY HIGH dv/dt CAPABILITY t(s)s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES ucs GATE CHARGE MINIMIZED rod )DESCRIPTION P t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- te cvanced family of power MOSFETs with outstanding le uperformances. The new patent pending strip layout so rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, b Pexceptional avalanche and dv/dt capabilities and - O teunrivalled gate charge and switching characteris- tics. t(s) oleAPPLICATIONS ss HIGH CURRENT, HIGH SPEED SWITCHING c bs SWITH MODE POWER SUPPLIES (SMPS) u Os DC-AC CONVERTERS FOR WELDING rod -EQUIPMENT P t(s)ABSOLUTE MAXIMUM RATINGS te cSymbol Parameter sole roduVDS b PVDGR O teVGS leID soID ObIDM (q) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) 3 2 1 TO-220 3 2 1 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP5NB40 STP5NB40FP 400 400 ±30 4.7 4.7 (*) 3 3 (*) 19 19 (*) Unit V V V A A A PTOT Total Dissipation at TC = 25°C 80 30 W Derating Factor 0.64 0.24 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4 4 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (•)Pulse width limited by safe operating area (1)ISD ≤4.7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed June 2001 1/9 STP5NB40/FP THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose TO-220 1.56 TO-220FP 4.1 62.5 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.7 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 200 t(s)ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ucSymbol Parameter Test Conditions Min. Typ. Max. dV(BR)DSS Drain-source ro )Breakdown Voltage ID = 250 µA, VGS = 0 400 te P ct(sIDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 sole roduIGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 mJ Unit V µA µA nA - Ob te PON (1) ) leSymbol t(s oVGS(th) c bsRDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 µA VGS = 10V, ID = 2.3 A Min. 3 Typ. 4 1.47 Max. 5 1.8 Unit V Ω Produ t(s) - ODYNAMIC te cSymbol le ugfs (1) Parameter Forward Transconductance so rodCiss b PCoss OObsoleteCrss Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS > ID(on) x RDS(on)max, ID = 2.3 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 2.4 405 72 9 Max. Unit S pF pF pF 2/9 STP5NB40/FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter td(on) tr Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions VDD = 200 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 320V, ID = 5 A, VGS = 10V Min. Typ. 11 8 14.5 7 5.1 Max. 20 Unit ns ns nC nC nC SWITCHING OFF )Symbol Parameter t(str(Voff) Off-voltage Rise Time ctf Fall Time dutc Cross-over Time Test Conditions VDD = 320V, ID = 5 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Pro t(s)SOURCE DRAIN DIODE te cSymbol Parameter Test Conditions le duISD Source-drain Current so roISDM (1) Source-drain Current (pulsed) b PVSD (2) Forward On Voltage ISD = 4.7 A, VGS = 0 - O tetrr ) leQrr t(s oIRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 5 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) c bsNote: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. u2. Pulse width limited by safe operating area. Min. Typ. 9 6 14 Max. Unit ns ns ns Min. Typ. 300 1.6 10.5 Max. 4.7 19 1.6 Unit A A V ns µC A OObbssoolleettee PPrroodduct(s) - OSafe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP5NB40/FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP roduct(s))Output Characteristics Transfer Characteristics OObbssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PProduct(sTransconductance Static Drain-source On Resistance 4/9 STP5NB40/FP Gate Charge vs Gate-source Voltage Capacitance Variations roduct(s))Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature OObbssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PProduct(sSource-drai.


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