Document
STP5NB40
STP5NB40FP
N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NB40
400 V < 1.8 Ω
4.7 A
STP5NB40FP
400 V < 1.8 Ω
4.7 A
s TYPICAL RDS(on) = 1.47 Ω s EXTREMELY HIGH dv/dt CAPABILITY
t(s)s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
ucs GATE CHARGE MINIMIZED
rod )DESCRIPTION P t(sUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
te cvanced family of power MOSFETs with outstanding le uperformances. The new patent pending strip layout so rodcoupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
b Pexceptional avalanche and dv/dt capabilities and - O teunrivalled gate charge and switching characteris-
tics.
t(s) oleAPPLICATIONS ss HIGH CURRENT, HIGH SPEED SWITCHING c bs SWITH MODE POWER SUPPLIES (SMPS) u Os DC-AC CONVERTERS FOR WELDING rod -EQUIPMENT
P t(s)ABSOLUTE MAXIMUM RATINGS
te cSymbol
Parameter
sole roduVDS b PVDGR O teVGS
leID soID ObIDM (q)
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed)
3 2 1
TO-220
3 2 1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP5NB40 STP5NB40FP
400 400 ±30 4.7 4.7 (*) 3 3 (*) 19 19 (*)
Unit
V V V A A A
PTOT
Total Dissipation at TC = 25°C
80 30 W
Derating Factor
0.64
0.24 W/°C
dv/dt (1) Peak Diode Recovery voltage slope
4 4 V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tstg Storage Temperature
–65 to 150
°C
Tj Max. Operating Junction Temperature
150 °C
(•)Pulse width limited by safe operating area (1)ISD ≤4.7A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
June 2001
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STP5NB40/FP
THERMAL DATA
Rthj-case Rthj-amb
Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose
TO-220 1.56
TO-220FP 4.1
62.5 300
°C/W °C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
4.7 A
EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
200
t(s)ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ucSymbol
Parameter
Test Conditions
Min. Typ. Max.
dV(BR)DSS Drain-source ro )Breakdown Voltage
ID = 250 µA, VGS = 0
400
te P ct(sIDSS
Zero Gate Voltage Drain Current (VGS = 0)
VDS = Max Rating VDS = Max Rating, TC = 125 °C
1 50
sole roduIGSS
Gate-body Leakage Current (VDS = 0)
VGS = ±30V
±100
mJ
Unit V µA µA nA
- Ob te PON (1) ) leSymbol t(s oVGS(th) c bsRDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On Resistance
Test Conditions VDS = VGS, ID = 250 µA VGS = 10V, ID = 2.3 A
Min. 3
Typ. 4
1.47
Max. 5 1.8
Unit V Ω
Produ t(s) - ODYNAMIC te cSymbol le ugfs (1)
Parameter Forward Transconductance
so rodCiss b PCoss OObsoleteCrss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max, ID = 2.3 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ. 2.4
405 72 9
Max.
Unit S
pF pF pF
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STP5NB40/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on) tr
Turn-on Delay Time Rise Time
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
Test Conditions
VDD = 200 V, ID = 2.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3)
VDD = 320V, ID = 5 A, VGS = 10V
Min.
Typ. 11 8
14.5 7 5.1
Max. 20
Unit ns ns
nC nC nC
SWITCHING OFF
)Symbol
Parameter
t(str(Voff)
Off-voltage Rise Time
ctf Fall Time
dutc Cross-over Time
Test Conditions
VDD = 320V, ID = 5 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5)
Pro t(s)SOURCE DRAIN DIODE
te cSymbol
Parameter
Test Conditions
le duISD Source-drain Current
so roISDM (1) Source-drain Current (pulsed)
b PVSD (2) Forward On Voltage
ISD = 4.7 A, VGS = 0
- O tetrr ) leQrr t(s oIRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD = 5 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5)
c bsNote: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. u2. Pulse width limited by safe operating area.
Min.
Typ. 9 6 14
Max.
Unit ns ns ns
Min.
Typ.
300 1.6 10.5
Max. 4.7 19 1.6
Unit A A V ns µC A
OObbssoolleettee PPrroodduct(s) - OSafe Operating Area for TO-220
Safe Operating Area for TO-220FP
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STP5NB40/FP
Thermal Impedence for TO-220
Thermal Impedence for TO-220FP
roduct(s))Output Characteristics
Transfer Characteristics
OObbssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PProduct(sTransconductance
Static Drain-source On Resistance
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STP5NB40/FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
roduct(s))Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature OObbssoolleettee PPrroodduucctt((ss)) -- OObbssoolleettee PProduct(sSource-drai.