CDD2395

www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2395 (9AW) TO-220 MARKING : AS BELOW Designed For Relay drive and DC-DC Converter. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP* Peak (pulse) PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range DataSheet4U.com *Single Pulse Pw=100ms ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCBO IC=50uA, IE=0 Collector Base Voltage VEBO IE=50uA,IC=0 Emitter Base Voltage ICBO VCB=60V, IE=0 Collector Cut off Current IEBO VEB=4V,IC=0 Emitter Cut off Current IC=2A,IB=0.2A Collector Emitter Saturation Voltage VCE(Sat) VBE(Sat) IC=2A, IB=0.2A Base Emitter Saturation Voltage hFE IC=0.5A, VCE=3V DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=30MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120; CDD 2395 D E : 100 -200; CDD 2395 E VALUE 60 50 5.0 3.0 4.5 2.0 30 150 -55 to +150 UNIT V V V A A W W deg C deg C DataShee MIN 50 60 5.0 60 - TYP 100 35 MAX 1.0 1.0 1.0 1.5 320 - UNIT V V V uA uA V V MHz pF F: 160-320; CDD 239...