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L24W04/08
Serial EEPROM
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Data Sheet
Revision A
S062A
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L24W04/08 4K/8K 2-Wire (512x8/1,024x8) 3V~5.5V CMOS Serial EEPROM
PRELIMINARY
A
Revision history
Rev. No. A Approved date 2004/4/26 History Initial issue Remark (purpose) Preliminary
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All rights reserved. LinkSmart reserves the right to change its products and specification `without prior notice. For the most up-to-date information, please visit our website at http://www.linksmart.com.tw or http://www.lstmc.com. All companies, brands, logos, pictures, product names and trademarks are the property of owner respective companies. LinkSmart Technology Co., Ltd. has been award ISO-9000 certification. All IC products are designed and manufactured in according with the highest quality standards and objectives. LinkSmart Technology Co., Ltd. B1, No. 216, Ta-Hsueh Road, Hsin-Chu City, Taiwan TEL: (886)-3-575 1188 FAX: (886)-3-575 1180 LinkSmart Microelectronics Technology Co., Ltd. 4F, A6 Standard Factory, Li Yuan Economic Development Park, Wu Xi City, China TEL: (86)-510-5160 232 FAX: (86)-510-5160 272 LinkSmart Microelectronics Technology Co., Ltd. (Sales Office) Room 2407, Nan-Shan Software Park, Nan-Shan District, ShenZhen City, China TEL: (86)-755-2658 1768 FAX: (86)-755-2658 1781 http://www.linksmart.com.tw http://www.lstmc.com
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Features z Operating voltage: 3V~5.5V z Low power consumption - Operation: 5mA max. - Standby: 5µA max. z Internal organization: - 4K: 512x8 - 8K: 1,024x8 z 2-wire Serial Interface z Write cycle time: 5ms max.
L24W04/08 4K/8K 2-Wire (512x8/1,024x8) 3V~5.5V CMOS Serial EEPROM
PRELIMINARY
A
z z z z z z z z z
Automatic erase-before-write operation Partial page write allowed 16-byte Page Write Mode Write operation with built-in timer Hardware controlled write protection 40-year data retention 1,000,000 (106)rewrite cycles per word Commercial temperature range (0°C to +70°C) 8-pin SOP/DIP/TSSOP package
General Description The L24W04/08 is a 4K/8K-bit serial read/write non-volatile memory device using the CMOS floating gate process. Its 4,096/8,192 bits of memory are organized into 512/1,024 words and each word is 8 bits. The device is optimized for use in many industrial and commercial
Block Diagram
applications where low power and low voltage operation are essential. Up to two L24W04/08 devices may be connected to the same 2-wire bus. The L24W04/08 is guaranteed for 1,000,000 (106) erase/write cycles and 40-year data retention.
Pin Configurations
SCL SDA
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I/O Control Logic
HV Pump X D E C
A0 A1 A2 Vss
1 2 3 4
8 7 6 5
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EEPROM Array Page Buf YDEC
Vcc W P SCL SDA
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WP
Memory Control Logic
A0~A2 Vcc Vss
Address Counter
Sense AMP R/W Control
Pin Description Pin Name A0~A2 SDA SCL WP Vss Vcc
I/O I I/O I I _ _
Description Address input Serial data Serial clock input Write protect Negative power supply, ground Positive power supply
Absolute Maximum Ratings Operating Temperature (Commercial) ...................................................................... 0°C to 70°C Storage Temperature ........................................................................................……. 50°C to 125°C Applied Vcc Voltage with Respect to Vss .................................................................. 0.3V to 6.0V Applied Voltage on any Pin with Respect to Vss ...................................……………… -0.3V to Vcc+0.3V Note: These are stress ratings only. Stresses exceeding the range specified under “Absolute Maximum Ratings” may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme 3 2004/4/26 DataSheet4U.com
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D.C. Characteristics
L24W04/08 4K/8K 2-Wire (512x8/1,024x8) 3V~5.5V CMOS Serial EEPROM
PRELIMINARY
A
conditions may affect device reliability. Ta=0°C to 70°C Typ. _ _ _ _ _ _ _ _ _ _ _ _ Max. 5.5 2 5 0.3Vcc Vcc+0.5 0.4 1 1 5 4 6 8 Unit V mA mA V V V uA uA uA uA pF pF
Test Conditions Min. Vcc Conditions Vcc Operating Voltage _ _ 3 ICC1 Operating Current 5V Read at 100kHz _ ICC2 Operating Current 5V Write at 100kHz _ VIL Input Low Voltage _ _ -1 VIH Input High Voltage _ _ 0.7Vcc VOL Output Low Voltage 2.4V IOL=2.1mA _ ILI Input Leakage Current 5V VIN=0 or Vcc _ ILO Output Leakage Current 5V VOUT=0 or Vcc _ ISTB1 Standby Current 5V VIN=0 or Vcc _ ISTB2 Standby Current 2.4V VIN=0 or Vcc _ CIN Input Capacitance (See Note) _ f=1MHz 25°C _ COUT Output Capacitance (See Note) _ f=1MHz 25°C _ Note: These parameters are periodically sampled but not 100% tested Symbol Parameter A.C. Characteristics Symbol fSK tHIGH tLOW tr tf Parameter Clock Frequency Clock High Time Clock Lo.