SW830

www.DataSheet4U.com SAMWIN General Description Features N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 500 V : 1.4 ohm : 5.0 A : 28 nc : 73 W SW830 This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Parameter DataSheet4U.com Value 500 5.5 3.7 (Note 1) 22 ±30 (Note 2) (Note 1) (Note 3) 390 7.3 3.5 73 0.58 -55~+150 300 Units V A A A V mJ mJ V/ns W W/℃ ℃ ℃ DataShee Continuous Drain Current (@Tc=25℃) Continuous Drain Current (@Tc=100℃ ) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25℃) Derating Factor above 25℃ Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal Characteristics Value Symbol RθJC RθCS RθJA Units Max 1.71 62 ℃/ W ℃/ W ℃/ W Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Min - Typ 0.5 - DataS...